unisonic technologies co., ltd MMBT5551 npn epitaxial silicon transistor www.unisonic.com.tw 1 of 4 copyright ? 2005 unisonic technologies co., ltd qw-r206-010,d high voltage switching transistor features * high collector-emitter voltage: v ceo =160v * high current gain sot-23 1 2 3 *pb-free plating product number:MMBT5551l ordering information order number pin assignment normal lead free plating package 1 2 3 packing MMBT5551-x-ae3-6-r MMBT5551l-x-ae3-6-r sot-23 e b c tape reel MMBT5551l-x-ae3-6-r (1)packing type (3)package type (4)rank (5)lead plating (2)pin assignment (1) r: tape reel (2) refer to pin assignment (3) ae3: sot-23 (4) x: refer to classification of h fe (5) l: lead free plating, blank: pb/sn marking g1
MMBT5551 npn epitaxial silicon transistor unisonic technologies co., ltd 2 of 4 www.unisonic.com.tw qw-r206-010,d absoluate maxium ratings (ta = 25
) parameter symbol ratings unit collector -base voltage v cbo 180 v collector -emitter voltage v ceo 160 v emitter -base voltage v ebo 6 v dc collector current i c 600 ma power dissipation p d 350 mw operating and storage j unction temperature t j, t stg -55 ~ +150
note absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings onl y and functional device operat ion is not implied. electrical characteristics (ta= 25
, unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v cbo i c =100 a, i e =0 180 v collector-emitter breakdown voltage v ceo i c =1ma, i b =0 160 v emitter-base breakdown voltage v ebo i e =10 a, i c =0 6 v collector cut-off current i cbo v cb =120v, i e =0 50 na emitter cut-off current i ebo v be =4v, i c =0 50 na dc current gain(note) h fe v ce =5v, i c =1ma v ce =5v, i c =10ma v ce =5v, i c =50ma 80 80 80 160 400 collector-emitter saturation voltage v ce(sat) i c =10ma, i b =1ma i c =50ma, i b =5ma 0.15 0.2 v base-emitter saturation voltage v be(sat) i c =10ma, i b =1ma i c =50ma, i b =5ma 1 1 v current gain bandwidth product f t v ce =10v, i c =10ma, f=100mhz 100 300 mhz output capacitance c ob v cb =10v, i e =0, f=1mhz 6.0 pf noise figure n f i c =0.25ma, v ce =5v r s =1k ? , f=10hz ~ 15.7khz 8 db note: pulse test: pw<300 s, duty cycle<2% classification of h fe rank a b c range 80-170 150-240 200-400
MMBT5551 npn epitaxial silicon transistor unisonic technologies co., ltd 3 of 4 www.unisonic.com.tw qw-r206-010,d typical characterics fig.2 dc current gain collector current, ic (ma) dc current gain, h fe 10 2 10 1 10 0 10 3 10 3 10 2 10 1 10 0 10 -1 v ce =5v fig.3 base-emitter on voltage 10 0 10 1 10 2 collector current, ic (ma) base-emitter voltage (v) 0 0.2 0.4 0.6 0.8 1.0 v ce =5v collector current, ic (ma) 10 3 10 2 10 1 10 0 10 -1 saturation voltage (v) fig.4 saturation voltage fig.5 current gain -bandwidth product fig.1 collector output capacitance v ce(sat ) v be (sat) ic=10*i b collector current, ic (ma) 10 0 10 1 10 2 10 3 current gain-bandwidth product, f t (mhz) 10 0 10 1 10 2 v ce =10v collector-base voltage (v) capacitance, cob (pf) 10 3 10 0 10 1 10 2 0 2 4 6 8 10 f=1mhz i e =0 10 3 10 1 10 0 10 -1 10 -2
MMBT5551 npn epitaxial silicon transistor unisonic technologies co., ltd 4 of 4 www.unisonic.com.tw qw-r206-010,d utc assumes no responsib ility for equipment failures that result from using pr oducts at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
|
